Research on the Radiation Effects and Compact Model of SiGe HBT
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Research on the Radiation Effects and Compact Model of SiGe HBT

SKU: 9789811046124

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Additional information

Full Title

Research on the Radiation Effects and Compact Model of SiGe HBT
Author(s)

Yabin Sun
Edition
ISBN

9789811046124, 9789811046117
Publisher

Springer
Format

PDF and EPUB

Description

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

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