Original price was: $55.00.$24.99Current price is: $24.99.
Access PHYSICS & MODELING OF MOSFETS, THE Surface-Potential Model HiSIM Now. Discount up to 90%
| Full Title | PHYSICS & MODELING OF MOSFETS, THE Surface-Potential Model HiSIM |
|---|---|
| Author(s) | Ezaki Tatsuya, Mattausch Hans Jurgen, Miura-mattausch Mitiko |
| Edition | |
| ISBN | 9789812812056, 9789812568649 |
| Publisher | World Scientific |
| Format | PDF and EPUB |
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Book Instantly Available.
Safe Payment with PayPal and Stripe
24/7 Customer Service
