Availability: In Stock

Nonvolatile Memory Design Magnetic, Resistive, and Phase Change 1st Edition

SKU: 9781351834193

Original price was: $140.00.Current price is: $24.99.

Access Nonvolatile Memory Design Magnetic, Resistive, and Phase Change 1st Edition Now. Discount up to 90%

Additional information

Full Title

Nonvolatile Memory Design Magnetic, Resistive, and Phase Change 1st Edition

Author(s)

Hai Li, Yiran Chen

Edition

1st Edition

ISBN

9781351834193, 9781138076631, 9781315218304, 9781439807460, 9781351825504, 9781439807453

Publisher

CRC Press

Format

PDF and EPUB

Description

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Availability: In Stock

Nonvolatile Memory Design Magnetic, Resistive, and Phase Change 1st Edition

SKU: 9781439807460

Original price was: $125.00.Current price is: $24.99.

Access Nonvolatile Memory Design Magnetic, Resistive, and Phase Change 1st Edition Now. Discount up to 90%

Additional information

Full Title

Nonvolatile Memory Design Magnetic, Resistive, and Phase Change 1st Edition

Author(s)

Hai Li, Yiran Chen

Edition

1st Edition

ISBN

9781439807460, 9781138076631, 9781439807453, 9781315218304

Publisher

CRC Press

Format

PDF and EPUB

Description

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.